IHW50N65R5 datasheet(4/15 Pages) INFINEON

Part #	IHW50N65R5

Description	Qualified according to JESD-022 for target applications

Download	15 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

4 / 15 page

4

IHW50N65R5

ResonantSwitchingSeries

Rev.2.3,2014-12-16

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emittervoltage,Tvj

≥25°C

VCE

650

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IC

80.0

50.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

150.0

A

Turn off safe operating area

VCE

≤650V,Tvj≤175°C,tp=1µs

-

150.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IF

37.0

22.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

150.0

A

Gate-emitter voltage

VGE

±20

V

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

282.0

141.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

0.53

K/W

Diode thermal resistance,

junction - case

Rth(j-c)

2.29

K/W

Thermal resistance

junction - ambient

Rth(j-a)

40

K/W

Similar Part No. - IHW50N65R5

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IHW50N65R6	1Mb / 16P	Reverse-Conducting IGBT with monolithic body diode Revision 1.20 2021-03-23

More results

Similar Description - IHW50N65R5

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IDW15E65D2	1Mb / 10P	Qualified according to JEDEC for target applications Rev.2.2,2014-08-26
	IDP40E65D2	1Mb / 10P	Qualified according to JEDEC for target applications Rev.2.2,2014-03-31
	IDP08E65D2	1Mb / 10P	Qualified according to JEDEC for target applications Rev.2.2,2014-08-28
	IDP15E65D2	1Mb / 10P	Qualified according to JEDEC for target applications Rev.2.2,2014-08-26
	IDW40E65D2	1Mb / 10P	Qualified according to JEDEC for target applications Rev.2.1,2013-12-16
	IDW50E60	1Mb / 11P	Qualified according to JEDEC for target applications Rev.2.2,2014-02-24
	IPD03N03LA	304Kb / 9P	Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications Rev. 0.93 2004-10-27
Murata Manufacturing Co...	935174730410-XXA	235Kb / 2P	Qualified according to AEC-Q100. Last updated06/13/2022
	935174732547-XXA	235Kb / 2P	Qualified according to AEC-Q100. Last updated06/13/2022
	935174736710-XXA	235Kb / 2P	Qualified according to AEC-Q100 Last updated06/13/2022

More results

IHW50N65R5 Datasheet(PDF) 4 Page - Infineon Technologies AG

IHW50N65R5 Datasheet(HTML) 4 Page - Infineon Technologies AG

Similar Part No. - IHW50N65R5

Similar Description - IHW50N65R5

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL