IHW20N65R5 datasheet(4/15 Pages) INFINEON

Part #	IHW20N65R5

Description	very tight parameter distribution

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

IHW20N65R5

ResonantSwitchingSeries

Rev.2.2,2014-11-27

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emittervoltage,Tvj

≥25°C

VCE

650

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IC

40.0

20.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

60.0

A

Turn off safe operating area

VCE

≤650V,Tvj≤175°C,tp=1µs

-

60.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IF

19.0

10.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

60.0

A

Gate-emitter voltage

VGE

±20

V

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

150.0

75.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

1.00

K/W

Diode thermal resistance,

junction - case

Rth(j-c)

4.68

K/W

Thermal resistance

junction - ambient

Rth(j-a)

40

K/W

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