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IGP30N65H5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IGP30N65H5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 14 page 6 IGP30N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.2,2014-12-04 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 18 - ns Rise time tr - 10 - ns Turn-off delay time td(off) - 208 - ns Fall time tf - 16 - ns Turn-on energy Eon - 0.41 - mJ Turn-off energy Eoff - 0.14 - mJ Total switching energy Ets - 0.55 - mJ Tvj=150°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=23.0 Ω,RG(off)=23.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 16 - ns Rise time tr - 5 - ns Turn-off delay time td(off) - 228 - ns Fall time tf - 27 - ns Turn-on energy Eon - 0.15 - mJ Turn-off energy Eoff - 0.05 - mJ Total switching energy Ets - 0.20 - mJ Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=23.0 Ω,RG(off)=23.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. |
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