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IDW40G120C5B Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IDW40G120C5B Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 10 page Final Data Sheet 7 Rev. 2.0, 2014-06-10 5 th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B Figure 5. Typical capacitive charge per leg as function of current slope 1, Q C=f(dIF/dt), Tj=150°C 1) guaranteed by design. Figure 6. Typical reverse characteristics per leg, IR=f(VR), parameter: Tj Figure 7. Max. transient thermal impedance per leg, Zth,j-c=f(tP), parameter: D=tP/T Figure 8. Typical capacitance per leg as function of reverse voltage, C=f(VR); Tj=25°C; f=1 MHz 0 20 40 60 80 100 120 100 400 700 1000 dIF/dt [A/µs] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 200 400 600 800 1000 1200 VR [V] -55 C 25 C 100 C 150 C 175 C 0.01 0.1 1 1E-6 1E-3 1E0 tp [s] D= 0.50 D= 0.20 D= 0.10 D= 0.05 D= 0.02 D= 0.01 Single Pulse 0 200 400 600 800 1000 1200 1400 1600 0 1 10 100 1000 VR [V] Per leg Per leg Per leg Per leg |
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