SIA426DJ datasheet(4/9 Pages) TFUNK

Part #	SIA426DJ

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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Document Number: 68630

S-81002-Rev. A, 05-May-08

Vishay Siliconix

SiA426DJ

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Soure-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0.6

0.8

1.0

1.2

1.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.010

0.016

0.022

0.028

0.034

0.040

0

5

10

15

20

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 9.9 A

Time (s)

10

1000

0.1

0.01

0.001

100

1

0

5

10

15

20

25

30

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

1s

10 s

DC

Limited byRDS(on)*

BVDSS

Limited

1ms

100 µs

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