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UTT50P06G-T2Q-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # UTT50P06G-T2Q-R
Description  P-CHANNEL (D-S) POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT50P06G-T2Q-R Datasheet(HTML) 4 Page - Unisonic Technologies

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UTT50P06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R502-596.C
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain-Source Breakdown Voltage, -BVDSS (V)
0.4
0
Drain Current vs. Gate Threshold Voltage
Gate Threshold Voltage, -VTH (V)
1.2
1.6
2.4
0.8
2.0
0
50
100
150
200
250
300
020
60
80
100
40
0
50
100
150
200
250
300
Drain-Source On-State Resistance
Characteristics
Drain to Source Voltage, -VDS (V)
0
8
0
0.05
0.1
0.15
4
12
0.25
0
Drain Current vs. Source to Drain Voltage
Source to Drain Voltage, -VSD (V)
0.2
0.4
0.6
0.8
1.2
0
10
20
50
60
0.2
30
1.0
16
20
VGS=-10V, ID=-17A
VGS=-4.5V, ID=-14A
40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.


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