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UTT50P06G-T2Q-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT50P06G-T2Q-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  UTT50P06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-596.C ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -60 V Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -1 -3 V Drain-Source Leakage Current IDSS VDS=-60V, VGS=0V -1 µA VDS=-60V, VGS=0V, TJ=125°C -50 VDS=-60V, VGS=0V, TJ=150°C -100 Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=-10V, ID=-17A 0.012 0.015 Ω VGS=-10V, ID=-50A, TJ=125°C 0.025 VGS=-10V, ID=-50A, TJ=150°C 0.028 VGS=-4.5V, ID=-14A 0.020 Forward Transconductance (Note 1) gFS VDS=-15V, ID=-17A 61 S On State Drain Current (Note 1) ID(ON) VGS=-10V, VDS=-5V -50 A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=-25V, f=1MHz 4950 pF Output Capacitance COSS 480 pF Reverse Transfer Capacitance CRSS 405 pF SWITCHING PARAMETERS (Note 2, 3) Total Gate Charge QG VGS=-10V, VDS=-30V, ID=-50A 110 165 nC Gate to Source Charge QGS 19 nC Gate to Drain Charge QGD 28 nC Turn-ON Delay Time tD(ON) VDD=-30V, RL=0.6Ω, ID≈ -50A, VGEN=-10V, RG=6Ω 15 23 ns Rise Time tR 70 105 ns Turn-OFF Delay Time tD(OFF) 175 260 ns Fall-Time tF 175 260 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2) Maximum Body-Diode Continuous Current IS -50 A Maximum Body-Diode Pulsed Current ISM -80 A Drain-Source Diode Forward Voltage (Note 1) VSD IF=-50A, VGS=0V -1.0 -1.6 V Body Diode Reverse Recovery Time tRR IF=-50A, dI/dt=100A/µs 45 70 ns Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. 3. Independent of operating temperature. |
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