UF830K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R209-030.D



PARAMETER

SYMBOL

RATINGS

UNIT

500

V

500

V

Gate to Source Voltage

±30

V

Drain Current

Continuous

4.5

A

Pulsed

18

A

TO-220

73

W

TO-220F/TO-220F1

TO-220F3

38

W

TO-220F2

40

W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

46

W

Single Pulse Avalanche Energy Rating (Note 2)

300

mJ

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

100.3

°C/W

Junction to Case

TO-220

1.71

°C/W

TO-220F/TO-220F1

TO-220F3

3.31

°C/W

TO-220F2

3.125

°C/W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

2.7

°C/W