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BTB24G-8-B-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BTB24G-8-B-TA3-T
Description  25A TRIACS
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTB24G-8-B-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies

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BTB24
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-046.c
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=75°C
IT(RMS)
25
A
Non Repetitive Surge Peak
On-State Current (Full
Cycle, TJ initial=25°C)
F=50 Hz
t=20ms
ITSM
250
A
F=60 Hz
t=16.7ms
260
A
I
2t Value for Fusing
tP=10ms
I
2t
340
A
2s
Critical Rate of Rise of
On-State Current IG=2xIGT,
tr≤100ns
F=120 Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak
Off-State Voltage
tP=10ms
TJ=25°C
VDSM/VRSM
VDRM/VRRM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
0.8
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)
FOR STANDARD TYPE (4 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
B
UNIT
MIN TYP MAX
Gate Trigger Current (Note 1)
IGT
VD=12V, RL=33Ω
I-II-III
50
mA
IV
100
mA
Gate Trigger Voltage
VGT
ALL
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ, TJ=125°C ALL
0.2
V
Holding Current Note 2)
IH
IT=500mA
80
mA
Latching Current
IL
IG=1.2 IGT
I-III-IV
70
mA
II
160
mA
Critical Rate of Rise of Off-State
Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate Open, TJ=125°C
500
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation(Note 2)
(dV/dt)c
(dI/dt)c=13.3A/ms, TJ= 125°C
10
V/µs
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Peak On-State Voltage (Note 2)
VTM
ITM=35A, tP=380μs
TJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
16
mΩ
Repetitive Peak Off-State Current
IDRM
VDRM=VRRM
TJ=25°C
5
μA
IRRM
TJ=125°C
3
mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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