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BTB10AL-6-CW-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BTB10AL-6-CW-TA3-T
Description  10A TRIACS
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTB10AL-6-CW-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies

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BTB10A
Preliminary
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-061.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=95°C
IT(RMS)
10
A
Non Repetitive Surge Peak On-State
Current (Full Cycle TJ initial=25°C)
F=50Hz
t=20ms
ITSM
100
A
F=60Hz
t=16.7ms
105
A
I
2t Value for Fusing
tP=10ms
I
2t
55
A
2s
Critical Rate of Rise of On-State Current:
IG=2xIGT, tr≤100ns
F=120Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak Off-State
Voltage
tP=10ms TJ=25°C
VDSM/VRSM
VDSM/VRSM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified)
FOR SNUBBERLESS (3 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
CW
BW
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
Gate Trigger Current
(Note 1)
IGT
VD=12V,
RL=33Ω
I-II-III
35
50
mA
Gate Trigger Voltage
VGT
I-II-III
1.3
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM,
RL=3.3kΩ,
TJ=125°C
I-II-III
0.2
0.2
V
Holding Current (Note 2)
IH
IT=500mA
35
50
mA
Latching Current
IL
IG=1.2IGT
I-III
50
70
mA
II
60
80
mA
Critical Rate of Rise of
Off-State Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate
Open, TJ=125°C
500
1000
V/µs
Critical Rate of Rise of
Off-State Voltage at
Commutation (Note 2)
(dI/dt)c
Without Snubber,
TJ=125°C
5.5
9.0
A/ms
Note: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Peak On-State Voltage (Note 2)
VT
ITM=14A, tP=380μsTJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
40
mΩ
Repetitive Peak Off-State Current
IDRM
VDRM=VRRM
TJ=25°C
5
μA
IRRM
TJ=125°C
1
mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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