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BTA04AL-x-xx-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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BTA04AL-x-xx-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BTA04A TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-062.C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT RMS On-State Current (360° Conduction Angle) TC=90°C IT(RMS) 4 A tp=8.3ms 42 A Non Repetitive Surge Peak On-State Current (TJ initial=25°C) tp=10ms ITSM 40 A I 2t Value tp=10ms I 2t 8 A 2s Repetitive F=50Hz 10 A/µs Critical Rate of Rise of On-State Current: IG=50mA, dIG/dt=0.1A/µs Non Repetitive dI/dt 50 A/µs Repetitive Peak Off-State Voltage (TJ=110°C) VDRM/VRRM 600 V Peak Gate Current tp=20µs IGM 4 A Peak Positive Gate Voltage tp=20µs VGM 16 V Peak Positive Gate Power Dissipation tp=20µs PGM) 40 W Average Gate Power Dissipation PG(AV) 1 W Operating Junction Temperature TJ -40~+110 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 °C/W Junction to Case (AC) θJC 2.7 °C/W ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified) FOR SNUBBERLESS AND LOGIC LEVEL (3 QUADRANTS) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT I-II-III 10 mA Gate Trigger Voltage VGT VD=12V (DC) RL=33Ω TJ=25°C I-II-III 1.5 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=110°C I-II-III 0.2 V Time Gate Trigger tGT VD=VDRM, IG=40mA, dIG/dt=0.5A/µs, TJ=25°C I-II-III 2 µs Holding Current (Note 1) IH IT=100mA, Gate Open, TJ=25°C 15 mA I-III 10 mA Latching Current IL IG=1.2IGT, TJ=25°C II 20 mA Peak On-State Voltage (Note 1) VTM ITM=5.5A, tp=380μs, TJ=25°C 1.65 V IDRM VDRM Rated, TJ=25°C 0.01 mA Repetitive Peak Off-State Current IRRM VRRM Rated, TJ=110°C 0.75 mA Critical Rate of Rise of Off-State Voltage (Note 1) dV/dt Linear Slope up to VD=67%VDRM, Gate Open, TJ=110°C 10 V/µs Critical Rate of Rise of Off-State Voltage at Commutation (Note 1) (dV/dt)c (dI/dt)c=1.8A/ms, TJ=110°C 1 V/µs Note: For either polarity of electrode MT2 voltage with reference to electrode MT1. |
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