IPL60R255P6 datasheet(4/15 Pages) INFINEON

Part #	IPL60R255P6

Description	Increased MOSFET dv/dt ruggedness

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

600VCoolMOS™P6PowerTransistor

IPL60R255P6

Rev.2.0,2014-05-16

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

15.9

10.1

A

TC=25°C

TC=100°C

Pulsed drain current

2)

ID,pulse

-

43

A

TC=25°C

Avalanche energy, single pulse

EAS

-

352

mJ

ID=2.8A; VDD=50V; see table 10

Avalanche energy, repetitive

EAR

-

0.53

mJ

ID=2.8A; VDD=50V; see table 10

Avalanche current, repetitive

IAR

-

2.8

A

-

MOSFET dv/dt ruggedness

dv/dt

-

100

V/ns

VDS=0...400V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

126

W

TC=25°C

Storage temperature

Tstg

-40

-

150

°C

-

Operating junction temperature

Tj

-40

-

150

°C

-

Continuous diode forward current

IS

-

13.8

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

43

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C

see table 8

Maximum diode commutation speed

dif/dt

-

500

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C

see table 8

1) Limited by Tj max. Maximum duty cycle D=0.75

2) Pulse width tp limited by Tj,max

3)IdenticallowsideandhighsideswitchwithidenticalRG

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