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IPP80N07S4-05 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP80N07S4-05 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 OptiMOS ™ -T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25°C, V GS=10V 80 A T C=100°C, V GS=10V 2) 80 Pulsed drain current 2) I D,pulse T C=25°C 320 Avalanche energy, single pulse 2) E AS I D=40A 240 mJ Avalanche current, single pulse I AS - 65 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value V DS 75 V R DS(on),max (SMD version) 5.2 m W I D 80 A Product Summary Type Package Marking IPB80N07S4-05 PG-TO263-3-2 4N0705 IPI80N07S4-05 PG-TO262-3-1 4N0705 IPP80N07S4-05 PG-TO220-3-1 4N0705 PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Rev. 1.0 page 1 2014-07-14 |
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