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20N40KG-TF2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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20N40KG-TF2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 20N40K-MT Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-B17.c ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous TC=25°C ID 20 A Drain Current Pulsed (Note 2) IDM 80 A Avalanche Current (Note 2) IAR 20 A Avalanche Energy Single Pulsed (Note 3) EAS 1000 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 45 W Derate above 25°C PD 0.35 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 5.01mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.8 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 400 V Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current IDSS VDS=400V, VGS=0V 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A 0.15 0.22 Ω DYNAMIC PARAMETERS Input Capacitance CISS 1170 pF Output Capacitance COSS 300 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 11.9 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 110 ns Rise Time tR 190 ns Turn-OFF Delay Time tD(OFF) 372 ns Fall-Time tF VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) 200 ns Total Gate Charge at 10V QG(TOT) 57 nC Gate to Source Charge QGS 15 nC Gate to Drain Charge QGD VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 16 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 20 A Maximum Body-Diode Pulsed Current ISM 80 A Drain-Source Diode Forward Voltage VSD ISD=23A, VGS=0V 1.5 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially Independent of Operating Temperature Typical Characteristics |
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