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10N60KG-TF3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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10N60KG-TF3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  10N60K-MT Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-022.h ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 1 µA Forward VGS=30V, VDS=0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A 0.63 0.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1570 2040 pF Output Capacitance COSS 166 215 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 18 24 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 33 57 nC Gate-Source Charge QGS 9 nC Gate-Drain Charge QGD VDS=50V, ID=1.3A, VGS=10V IG=100μA (Note1, 2) 8.5 nC Turn-On Delay Time tD(ON) 67 ns Turn-On Rise Time tR 84 ns Turn-Off Delay Time tD(OFF) 205 ns Turn-Off Fall Time tF VDD=30V, ID=0.5A, RG=25Ω, VGS=0V (Note1, 2) 95 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time trr 420 ns Reverse Recovery Charge QRR VGS=0V, IS=10A, dIF/dt=100A/µs (Note1) 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature |
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