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7N65K-MTQ Datasheet(PDF) 4 Page - Unisonic Technologies |
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7N65K-MTQ Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 7N65K-MTQ Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-020.E ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA Forward VGS = 30V, VDS = 0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.5A 1.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 875 1000 pF Output Capacitance COSS 88 120 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 8 25 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 60 ns Turn-On Rise Time tR 65 80 ns Turn-Off Delay Time tD(OFF) 110 130 ns Turn-Off Fall Time tF VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) 55 70 ns Total Gate Charge QG 22.5 40 nC Gate-Source Charge QGS 7.5 nC Gate-Drain Charge QGD VDS=50V, ID=1.3A, VGS=10V (Note 1, 2) 5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Body Diode Reverse Recovery Time trr 320 ns Body Diode Reverse Recovery Charge QRR IS=7A, di/dt=100A/μs 2.4 nC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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