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4N70KG-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 4N70KG-TF1-T
Description  N-CHANNEL JUNCTIN SILICON FET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N70KG-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies

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4N70K-TA
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R205-040.B
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.0
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
17.6
A
Single Pulsed (Note 3)
EAS
216
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
TO-220F/TO-220F1/
TO-220F2/TO-220F3
36
W
TO-251/TO-251S
TO-252/TO-252D
49
W
Power Dissipation
TO-262
PD
106
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 27mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220F/TO-220F1/
TO-220F2/TO-220F3
TO-262
62.5
°C/W
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
θJA
110
°C/W
TO-220F/TO-220F1
TO-220F3
3.47
°C/W
TO-220F2
3.28
°C/W
TO-251/TO-251S
TO-252/TO-252D
2.55
°C/W
Junction to Case
TO-262
θJC
1.18
°C/W


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