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UTT6N10ZL-TN3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UTT6N10ZL-TN3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-921.B 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10Z is usually used in DC-DC Conversion. FEATURES * RDS(on) < 108mΩ @ VGS = 10 V, ID=3A * High Switching Speed SYMBOL 1.Gate 3.Source 2.Drain SOT-223 TO-252 1 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 - UTT6N10ZG-AA3-R SOT-223 G D S Tape Reel UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING SOT-223 TO-252 |
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