4N60KG-TN3-R datasheet(1/7 Pages) UTC

Part #	4N60KG-TN3-R

Description	N-CHANNEL JUNCTIN SILICON FET

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

Logo

1 / 7 page

UNISONIC TECHNOLOGIES CO., LTD

4N60K-MT

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-B30.e

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60K-MT is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness



SYMBOL

Similar Part No. - 4N60KG-TN3-R

Manufacturer	Part #	Datasheet	Description
Unisonic Technologies	UT3458	180Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	4N70K-TA	271Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	2N50K-TA	208Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	11NM40	229Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	13N50K	208Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	2N70K	283Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	3N70K-MK	212Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	UT4114	179Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	2SK3666	150Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	UT75N03	197Kb / 3P	N-CHANNEL JUNCTIN SILICON FET