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4N60KG-TMS2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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4N60KG-TMS2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 4N60K-MT Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-B30.e ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V VDS=600V, VGS=0V 10 μA Drain-Source Leakage Current IDSS VDS=600V, VGS=0V, TC=125°С 10 μA Forward VGS=30V, VDS=0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS= -30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10 V, ID=2.2A 1.79 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 425 575 pF Output Capacitance COSS 55 75 pF Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz 6 11 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 45 ns Turn-On Rise Time tR 49 ns Turn-Off Delay Time tD(OFF) 80 ns Turn-Off Fall Time tF VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 43 ns Total Gate Charge QG 20 nC Gate-Source Charge QGS 5.6 nC Gate-Drain Charge QGD VDS= 50V,ID= 1.3A, VGS= 10V (Note 1, 2) 4.0 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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