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7N60-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N60-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page  7N60-R Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-984. A ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 0.91 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1000 1200 pF Output Capacitance COSS 120 150 pF Reverse Transfer Capacitance CRSS 17 23 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) 55 85 ns Turn-On Rise Time tR 110 140 ns Turn-Off Delay Time tD(OFF) 220 250 ns Turn-Off Fall Time tF 180 210 ns SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10V (Note 1, 2) 170 210 nC Gate-Source Charge QGS 9 nC Gate-Drain Charge QGD 22 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) 320 ns Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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