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4N65G-TQ2-R Datasheet(PDF) 7 Page - Unisonic Technologies |
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4N65G-TQ2-R Datasheet(HTML) 7 Page - Unisonic Technologies |
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7 / 9 page  4N65-Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 9 www.unisonic.com.tw QW-R502-963.E TYPICAL CHARACTERISTICS -100 Junction Temperature, TJ (°С) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Junction Temperature, TJ (°С) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 10 1 10 0.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 150°С Notes: 1. VDS=50V 2. 250µs Pulse Test 10 1 0.1 25°С 5.0V Notes: 1. 250µs Pulse Test 2. TC=25°С VGS Top: 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V |
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