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4N65L-TF2-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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4N65L-TF2-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 4N65-N Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-965.C ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note2) IAR 4.4 A Drain Current Continuous ID 4.0 A Pulsed (Note2) IDM 16 A Avalanche Energy Single Pulsed (Note3) EAS 260 mJ Repetitive (Note2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns Power Dissipation TO-220/TO-262/TO-263 PD 106 W TO-220F/TO-220F1 TO-220F3 35 W TO-220F2 36 W TO-251/ TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 50 W DFN-8(5×6) 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F2/TO-220F3 θJA 62.5 °С/W TO-251/ TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 110 °С/W DFN-8(5×6) 75 °С/W Junction to Case TO-220/TO-262/TO-263 θJC 1.18 °С/W TO-220F/TO-220F1 TO-220F3 3.5 °С/W TO-220F2 3.4 °С/W TO-251/ TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 2.5 °С/W DFN-8(5×6) 4.17 °С/W |
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