4N60G-TF3-T datasheet(1/7 Pages) UTC

Part #	4N60G-TF3-T

Description	N-CHANNEL JUNCTIN SILICON FET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

4N60-E

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-970.C

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60-E is a high voltage power MOSFET

and is designed to have better characteristics, such as

fast switching time, low gate charge, low on-state

resistance

and

have

a

high

rugged

avalanche

characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies,

PWM motor controls, high efficient DC to DC converters

and bridge circuits.



FEATURES

* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high RuggednessA



SYMBOL

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