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2N7002DW Datasheet(PDF) 3 Page - Infineon Technologies AG |
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2N7002DW Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page 2N7002DW Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 13 20 pF Output capacitance C oss - 4.1 6 Reverse transfer capacitance Crss - 2.0 3 Turn-on delay time t d(on) - 3.0 4.5 ns Rise time t r - 3.3 5 Turn-off delay time t d(off) - 5.5 9 Fall time t f - 3.1 5 Gate Charge Characteristics Gate to source charge Q gs - 0.05 0.1 nC Gate to drain charge Q gd - 0.2 0.4 Gate charge total Q g - 0.4 0.6 Gate plateau voltage V plateau - 4.0 - V Reverse Diode Diode continous forward current I S - - 0.3 A Diode pulse current I S,pulse - - 1.2 Diode forward voltage V SD V GS=0 V, I F=0.5 A, T j=25 °C - 0.96 1.2 V Reverse recovery time t rr - 8.5 13 ns Reverse recovery charge Q rr - 2.4 4 nC V R=30 V, I F=0.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.5 A, R G,ext=6 W V DD=48 V, I D=0.5 A, V GS=0 to 10 V Rev.2.3 page 3 2014-09-19 |
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Similar Description - 2N7002DW_14 |
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