UTT30N10G-TF3-T datasheet(3/6 Pages) UTC

Part #	UTT30N10G-TF3-T

Description	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 6 page

UTT30N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-661.F



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

V

Drain-Source Leakage Current

IDSS

VDS=100V, VGS=0V

1

µA

Gate- Source Leakage

Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

nA

Reverse

VGS=-20V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1

3

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=30A

39.5

52

mΩ

VGS=6V, ID=15A

39.2

72

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

2590

pF

Output Capacitance

COSS

144

pF

Reverse Transfer Capacitance

CRSS

105

pF

SWITCHING PARAMETERS

Turn-ON Time

tON

VDD=30V, ID=0.5A, VGS=10V,

RGS=25Ω

48

ns

Turn-ON Delay Time

tD(ON)

68

ns

Rise Time

tR

780

ns

Turn-OFF Delay Time

tD(OFF)

126

ns

Total Gate Charge at 10V

QG

VGS=10V, VDS=25V, ID=1.3A,

IG=100µA

75

nC

Gate to Source Charge

QGS

9

nC

Gate to Drain Charge

QGD

16

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

30

A

Maximum Body-Diode Pulsed Current

ISM

120

A

Drain-Source Diode Forward Voltage

VSD

ISD=30A

1.25

V

ISD=15A

1.0

V

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