UTT10N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-714.d



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

10

A

Pulsed

40

A

Avalanche Current

12.8

A

Avalanche Energy

Single Pulsed

95

mJ

Repetitive

6.5

mJ

Peak Diode Recovery dv/dt

dv/dt

6

V/ns

Power Dissipation

54

W

Junction Temperature

-25 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

2.31

°C/W



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

3.0

V

Static Drain-Source On-State Resistance

142 180

mΩ

DYNAMIC PARAMETERS

Input Capacitance

700 900

pF

Output Capacitance

50

65

pF

Reverse Transfer Capacitance

40

55

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

30

50

ns

Rise Time

30

50

ns

Turn-OFF Delay Time

290 350

ns

Fall-Time

50

80

ns

Total Gate Charge

90

110

nC

Gate to Source Charge

6

nC

Gate to Drain Charge

7

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

10

A

Maximum Body-Diode Pulsed Current

40

A

Drain-Source Diode Forward Voltage

1.5

V