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UT85N03G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT85N03G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UT85N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-292.D ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current ID 85 A Pulsed Drain Current IDM 350 A Total Power Dissipation TO-220/TO-263 PD 83 W TO-252 56 Junction Temperature TJ +75 °C Strong Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-263 θJA 62.5 °C/W TO-252 110 Junction to Case TO-220/TO-263 θJC 1.8 °C/W TO-252 2.7 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 30 V Breakdown Voltage Temperature Coefficient ∆BVDSS/ ∆TJ ID=1mA, Reference to 25°C 0.018 V/°C Drain-Source Leakage Current IDSS VDS=30V, VGS=0V 1 µA Gate-Source Leakage Current IGSS VDS=0V, VGS= ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 3 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=45A 6 mΩ VGS=4.5V, ID=30A 10 Forward Transconductance gFS VDS=10V, ID=30A 32 S DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz 2700 4200 pF Output Capacitance COSS 550 pF Reverse Transfer Capacitance CRSS 380 pF SWITCHING PARAMETERS Total Gate Charge (Note) QG VDS=24V, VGS=4.5V, ID=30A 240 300 nC Gate Source Charge QGS 35 nC Gate Drain Charge QGD 78 nC Turn-ON Delay Time (Note) tD(ON) VGS=10V, VDS=15V, RD=0.5Ω, RG=3.3Ω, ID=30A 52 ns Turn-ON Rise Time tR 100 ns Turn-OFF Delay Time tD(OFF) 460 ns Turn-OFF Fall-Time tF 280 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS =45A, VGS=0V 1.3 V Body Diode Reverse Recovery Time tRR IS=30A, VGS=0V, dIS/dt=100A/μs 28 ns Body Diode Reverse Recovery Charge QRR 10 nC Note: Pulse width≦300μs, Duty cycle≦2% |
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