UT75N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-327.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

75

A

Pulsed Drain Current (Note 2)

225

A

Single Pulsed Avalanche Current (Note 3)

100

A

Single Pulsed Avalanche Energy (Note 3)

228

mJ

TO-220

75

TO-251/ TO-252

89

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-251/ TO-252

110

°C/W

TO-220

2.0

Junction to Case

TO-251/ TO-252

1.4

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage

1

3

V

5

7

mΩ

Static Drain-Source On-Resistance

7

10

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3298

pF

Output Capacitance

1400

pF

Reverse Transfer Capacitance

287

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

20

38

ns

Turn-ON Rise Time

12

23

ns

Turn-OFF Delay Time

113

198

ns

Turn-OFF Fall-Time

40

78

ns

Total Gate Charge

48

55

nC

Gate-Source Charge

10

nC

Gate-Drain Charge

27

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage(Note)

1.5

V

Maximum Body-Diode Continuous Current

75

A

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.