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8N65L-TA3-T Datasheet(PDF) 8 Page - Unisonic Technologies |
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8N65L-TA3-T Datasheet(HTML) 8 Page - Unisonic Technologies |
8 / 9 page 8N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 8 of 9 www.unisonic.com.tw QW-R502-591.D TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (°C) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Junction Temperature, TJ (°C) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 10 1 0.1 Drain-Source Voltage, VDS (V) 100 10 1 100µs 1000 10ms DC Maximum Safe Operating Area Case Temperature, TC (°C) 75 100 0 125 50 25 2 4 6 8 10 Maximum Drain Current vs. Case Temperature Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 10µs 1 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. θJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse |
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