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IPB240N04S4-R9 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPB240N04S4-R9 Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 9 page  IPB240N04S4-R9 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C 150 °C 1 10 100 1000 0.1 1 10 100 1000 t AV [µs] 25 °C 175 °C 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Ciss Coss Crss 10 2 10 3 10 4 10 5 0 5 10 15 20 25 30 35 40 V DS [V] 230 µA 2300 µA 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.1 page 6 2014-04-07 |
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