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IPA60R800CE Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPA60R800CE Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 17 page 7 600VCoolMOS™CEPowerTransistor IPD60R800CE,IPA60R800CE Rev.2.0,2014-09-25 Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.5A,Tj=25°C Reverse recovery time trr - 250 - ns VR=400V,IF=2.5A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 1.8 - µC VR=400V,IF=2.5A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 16 - A VR=400V,IF=2.5A,diF/dt=100A/µs; see table 9 |
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