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BSL373SN Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BSL373SN
Description  Enhancement mode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSL373SN Datasheet(HTML) 8 Page - Infineon Technologies AG

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BSL373SN
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=2 A pulsed
parameter: T j(start)
parameter: V DD
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
01234567
Q
gate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
t
AV [µs]
Rev 2.0
page 7
2014-10-16
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
80
84
88
92
96
100
104
108
112
116
120
-60
-20
20
60
100
140
180
T
j [°C]
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
01234567
Q
gate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
t
AV [µs]
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
Rev 2.0
page 7
2014-10-16


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