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TLV117112DCYR Datasheet(PDF) 11 Page - Texas Instruments |
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TLV117112DCYR Datasheet(HTML) 11 Page - Texas Instruments |
11 / 18 page P =(V V )I - D IN OUT OUT TLV1171 www.ti.com SBVS177 – APRIL 2012 DROPOUT VOLTAGE The TLV1171 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device behaves like a resistor in dropout. As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over- and undershoot magnitude. UNDERVOLTAGE LOCKOUT (UVLO) The TLV1171 uses an undervoltage lockout circuit to keep the output shut off until the internal circuitry operates properly. THERMAL INFORMATION Thermal protection disables the output when the junction temperature rises to approximately +165°C, thus allowing the device to cool. When the junction temperature cools to approximately +145°C, the output circuitry is again enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits dissipation of the regulator, protecting it from damage as a result of overheating. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heatsink. For reliable operation, junction temperature should be limited to +125°C (max). To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature until the thermal protection is triggered; use worst-case loads and signal conditions. The TLV1171 internal protection circuitry has been designed to protect against overload conditions. It is not intended to replace proper heatsinking. Continuously running the TLV1171 into thermal shutdown degrades device reliability. POWER DISSIPATION The ability to remove heat from the die is different for each package type and presents different considerations in the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves heat from the device to ambient air. Performance data for JEDEC low and high-K boards are given in the Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device. The addition of plated through-holes to heat-dissipating layers also improves heatsink effectiveness. Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of the output current and voltage drop across the output pass element, as shown in Equation 2: (2) Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 11 |
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