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12N70G-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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12N70G-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 12N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-220.F ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 700 V Drain-Source Leakage Current IDSS VDS = 700 V, VGS = 0 V 10 μA Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.7 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz 1600 1900 pF Output Capacitance COSS 160 270 pF Reverse Transfer Capacitance CRSS 25 35 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 96 120 ns Turn-On Rise Time tR 158 240 ns Turn-Off Delay Time tD(OFF) 370 400 ns Turn-Off Fall Time tF 180 220 ns Total Gate Charge QG VDS= 50V,ID= 1.3A, VGS= 10 V (Note 1, 2) 56 60 nC Gate-Source Charge QGS 10 nC Gate-Drain Charge QGD 17 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time trr VGS = 0 V, IS = 12A, dIF/dt = 100 A/μs (Note 1) 380 ns Reverse Recovery Charge QRR 3.5 μC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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