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7N70L-TF2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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7N70L-TF2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 8 page 7N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R502-103. H ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700V, VGS = 0V 1 μA VDS = 560V, TC = 125°C 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250mA Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Drain-Source ON-State Resistance RDS(ON) VGS = 10V, ID = 3.5A 1.4 1.6 Ω Forward Transconductance (Note 1) gFS VDS = 40V, ID = 3.5A 8.0 S DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 1200 1600 pF Output Capacitance COSS 150 190 pF Reverse Transfer Capacitance CRSS 60 80 pF SWITCHING CHARACTERISTICS Turn-on Delay Time tD(ON) VDD = 30V, ID = 1A (Note 1, 2) 60 80 ns Turn-on Rise Time tR 200 230 ns Turn-off Delay Time tD(OFF) 280 350 ns Turn-off Fall Time tF 250 300 ns Total Gate Charge QG VDS= 100V, ID= 7.0A, VGS= 10V (Note 1, 2) 163 nC Gate-Source Charge QGS 12 nC Gate-Drain Charge QDD 30 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =7.0A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Reverse Recovery Time trr VGS = 0V, IS = 7.0A, dIF/dt = 100 A/μs (Note 1) 320 ns Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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