2N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-478.E



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

900

V

Breakdown Voltage Temperature Coefficient

△

1.0

V/°C

Drain-Source Leakage Current

10

µA

100

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-State Resistance

5.6

7.2

Ω

Forward Transconductance

2.0

S

DYNAMIC PARAMETERS

Input Capacitance

480 520

pF

Output Capacitance

45

pF

Reverse Transfer Capacitance

7

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

(Note 1,2)

50

ns

Rise Time

65

ns

Turn-OFF Delay Time

90

ns

Fall-Time

45

ns

Total Gate Charge

16

26

nC

Gate to Source Charge

5.5

nC

Gate to Drain Charge

4.5

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

2.2

A

Maximum Pulsed Drain-Source Diode

Forward Current

8.8

A

Drain-Source Diode Forward Voltage

1.4

V

Reverse Recovery Time

s (Note 1)

400

ns

Reverse Recovery Charge

1.6

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature