1N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-579.E



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

10

μA

Gate-Source Leakage Current

Forward

100

nA

Reverse

-100 nA

Breakdown Voltage Temperature Coefficient

△

0.4

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

9.5 12.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

f=1MHz

120 150

pF

Output Capacitance

20

25

pF

Reverse Transfer Capacitance

3.0

4.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

5

20

ns

Turn-On Rise Time

25

60

ns

Turn-Off Delay Time

7

25

ns

Turn-Off Fall Time

25

60

ns

Total Gate Charge

5.0

6.0

nC

Gate-Source Charge

1.0

nC

Gate-Drain Charge

2.6

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

1.2

A

Maximum Pulsed Drain-Source Diode

Forward Current

4.8

A

Reverse Recovery Time

160

ns

Reverse Recovery Charge

0.3

μC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature