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UF740G-TQ2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF740G-TQ2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF740 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-078. G ABSOLUTE MAXIMUM RATINGS (T C = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) VDGR 400 V Gate to Source Voltage VGS ±20 V Drain Current Continuous ID 10 A TC = 100°C ID 6.3 A Pulsed IDM 40 A Avalanche Energy Single Pulsed (Note 3) EAS 520 mJ Power Dissipation TO-220/TO-263 PD 125 W TO-220F/TO-220F1 44 TO-220F2 46 Derating above 25°C TO-220/TO-263 1.0 W/°C TO-220F/TO-220F1 0.35 TO-220F2 0.37 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-263 θJc 1.0 °C/W TO-220F/TO-220F1 2.86 TO-220F2 2.72 |
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