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7N10G-TND-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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7N10G-TND-R Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  7N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-394.J ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA 100 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID =250µA 0.1 V/°C Drain-Source Leakage Current IDSS VDS =100V, VGS =0V 1 µA VDS =80V, TC =125°C 10 µA Gate-Source Leakage Current IGSS VGS =±25V, VDS =0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID =250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3.5A 0.144 0.35 Ω Forward Transconductance gFS VDS =40V, ID =0.85A (Note 1) 1.85 S DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz 380 450 pF Output Capacitance COSS 70 85 pF Reverse Transfer Capacitance CRSS 11 15 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A (Note 1,2) 14.3 nC Gate Source Charge QGS 4.2 nC Gate Drain Charge QGD 3.2 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1,2) 30 38 ns Turn-ON Rise Time tR 40 50 ns Turn-OFF Delay Time tD(OFF) 80 90 ns Turn-OFF Fall-Time tF 35 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V 1.5 V Reverse Recovery Time trr VGS=0V, IS=7.3A, diF/dt=100A/µs 70 ns Reverse Recovery Charge QRR 150 nC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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