PESD36VS2UT_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 16 July 2009

2 of 12

NXP Semiconductors

PESD36VS2UT

Low capacitance unidirectional double ESD protection diode

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1 or 2 to pin 3.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

cathode (diode 1)

2

cathode (diode 2)

3

common anode

12

3

006aaa154

12

3

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PESD36VS2UT

-

plastic surface-mounted package; 3 leads

SOT23

Table 4.

Marking codes

Type number

Marking code[1]

PESD36VS2UT

LF*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2] -

160

W

peak pulse current

[1][2] -

2.5

A

Per device

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C