PESDXV4UK_SER

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 1 — 25 August 2010

3 of 15

NXP Semiconductors

PESDxV4UK series

Very low capacitance unidirectional quadruple ESD protection arrays

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

μs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1, 3, 4, or 6 to pin 2.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1, 3, 4 or 6 to pin 2.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2] -

PESD3V3V4UK

PESD5V0V4UK

-25

W

PESD9V0V4UK

-

28

W

peak pulse current

[1][2] -

PESD3V3V4UK

-

2.7

A

PESD5V0V4UK

-

2.5

A

PESD9V0V4UK

-

1.5

A

Per device

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2]

PESD3V3V4UK

-

10

kV

PESD5V0V4UK

-

15

kV

PESD9V0V4UK

-

8

kV

PESDxV4UK series

machine model

[2] -

400

V

PESDxV4UK series

MIL-STD-883 (human

body model)

-8

kV

Table 7.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV