IPA083N10N5 datasheet(5/11 Pages) INFINEON

Part #	IPA083N10N5

Description	Ideal for high frequency switching and sync. rec

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 11 page

5

OptiMOSª5Power-Transistor,100V

IPA083N10N5

Rev.2.0,2014-12-18

Final Data Sheet

Table5Dynamiccharacteristics1)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

2100

2730

pF

VGS=0V,VDS=50V,f=1MHz

Output capacitance

Coss

-

337

438

pF

VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance

Crss

-

16

28

pF

VGS=0V,VDS=50V,f=1MHz

Turn-on delay time

td(on)

-

15

-

ns

VDD=50V,VGS=10V,ID=44A,

RG,ext=1.6

Ω

Rise time

tr

-

5

-

ns

VDD=50V,VGS=10V,ID=44A,

RG,ext=1.6

Ω

Turn-off delay time

td(off)

-

24

-

ns

VDD=50V,VGS=10V,ID=44A,

RG,ext=1.6

Ω

Fall time

tf

-

5

-

ns

VDD=50V,VGS=10V,ID=44A,

RG,ext=1.6

Ω

Table6Gatechargecharacteristics2)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

10

-

nC

VDD=50V,ID=44A,VGS=0to10V

Gate to drain charge

1)

Qgd

-

6

10

nC

VDD=50V,ID=44A,VGS=0to10V

Switching charge

Qsw

-

10

-

nC

VDD=50V,ID=44A,VGS=0to10V

Gate charge total

1)

Qg

-

30

37

nC

VDD=50V,ID=44A,VGS=0to10V

Gate plateau voltage

Vplateau

-

4.8

-

V

VDD=50V,ID=44A,VGS=0to10V

Output charge

1)

Qoss

-

40

53

nC

VDD=50V,VGS=0V

Table7Reversediode

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Diode continous forward current

IS

-

30

A

TC=25°C

Diode pulse current

IS,pulse

-

176

A

TC=25°C

Diode forward voltage

VSD

-

0.9

1.2

V

VGS=0V,IF=44A,Tj=25°C

Reverse recovery time

1)

trr

-

55

110

ns

VR=50V,IF=IS,diF/dt=100A/µs

Reverse recovery charge

1)

Qrr

-

95

190

nC

VR=50V,IF=IS,diF/dt=100A/µs

1) Defined by design. Not subject to production test.

2) See

″Gate charge waveforms″ for parameter definition

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