IDW30C65D2 datasheet(5/10 Pages) INFINEON

Part #	IDW30C65D2

Description	Emitter Controlled Diode Rapid 2 Common Cathode Series

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDW30C65D2

EmitterControlledDiodeRapid2CommonCathodeSeries

Rev.2.1,2014-12-09

Switching Characteristics (per leg), Inductive Load

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

Diode Characteristic, at

Tvj = 25°C

Diode reverse recovery time

trr

-

32

-

ns

Diode reverse recovery charge

Qrr

-

0.20

-

µC

Diode peak reverse recovery current

Irrm

-

12.8

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-6300

-

A/µs

Tvj=25°C,

VR=400V,

IF=15.0A,

diF/dt=1000A/µs,

L

σ=35nH,

C

σ=32pF,

switch IPW60R045CP.

Diode reverse recovery time

trr

-

51

-

ns

Diode reverse recovery charge

Qrr

-

0.12

-

µC

Diode peak reverse recovery current

Irrm

-

3.3

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-1500

-

A/µs

Tvj=25°C,

VR=400V,

IF=15.0A,

diF/dt=200A/µs,

L

σ=35nH,

C

σ=32pF,

switch IPW60R045CP.

Switching Characteristics (per leg), Inductive Load

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

Diode Characteristic, at

Tvj = 175°C/125°C

Diode reverse recovery time

trr

-

32

-

ns

Diode reverse recovery charge

Qrr

-

0.37

-

µC

Diode peak reverse recovery current

Irrm

-

16.9

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-6400

-

A/µs

Tvj=175°C,

VR=400V,

IF=15.0A,

diF/dt=1000A/µs,

L

σ=35nH,

C

σ=32pF,

switch IPW60R045CP.

Diode reverse recovery time

trr

-

51

-

ns

Diode reverse recovery charge

Qrr

-

0.21

-

µC

Diode peak reverse recovery current

Irrm

-

5.0

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-1900

-

A/µs

Tvj=125°C,

VR=400V,

IF=15.0A,

diF/dt=200A/µs,

L

σ=35nH,

C

σ=32pF,

switch IPW60R045CP.

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