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BSG0811ND Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSG0811ND Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 15 page BSG0811ND Power Block Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Optimized for high performance buck converters • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Unit Q1 Q2 Continuous drain current I D T C=70 °C, V GS=10 V 50 50 A T C=70 °C, V GS=4.5 V 50 50 T A=25 °C, V GS=4.5 V 3) 31 50 T A=25 °C, V GS=4.5 V 4) 19 41 Pulsed drain current I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=10 A, Q2: I D=20 A, R GS=25 Ω 30 160 mJ Gate source voltage V GS V Power dissipation P tot T A=25 °C 3) 6.25 6.25 W T A=25 °C 4) 2.5 2.5 Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 Value -55 ... 150 55/150/56 ±16 1) J-STD20 and JESD22 Type Package Marking BSG0811ND PG-TISON8-4 0811ND Q1 Q2 V DS 25 25 V R DS(on),max V GS=10 V 3 0.8 m Ω V GS=4.5 V 4 1.1 I D 50 50 A Product Summary Rev.2.0 page 1 2015-03-16 |
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