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BSC026N08NS5 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # BSC026N08NS5
Description  Optimized for Synchronous Rectification in server and desktop
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC026N08NS5 Datasheet(HTML) 5 Page - Infineon Technologies AG

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5
OptiMOSTM5Power-Transistor,80V
BSC026N08NS5
Rev.2.1,2015-08-31
Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
80
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.2
3
3.8
V
VDS=VGS,ID=115µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
2.2
3.0
2.6
3.9
m
Ω
VGS=10V,ID=50A
VGS=6V,ID=25A
Gate resistance
1)
RG
-
1.9
2.9
Ω
-
Transconductance
gfs
60
120
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
5200
6800
pF
VGS=0V,VDS=40V,f=1MHz
Output capacitance
1)
Coss
-
840
1100
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
38
66
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
18
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Rise time
tr
-
14
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Turn-off delay time
td(off)
-
47
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
Fall time
tf
-
16
-
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3
Ω
1) Defined by design. Not subject to production test.


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