UT2316

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-126.C



PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

3.6

A

Pulsed Drain Current (Note 1, 2)

16

A

0.96

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

175

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

V

6

A

On-State Drain Current

4

A

42

50

mΩ

Drain-Source On-State Resistance (Note 2)

68

85

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

215

pF

Output Capacitance

90

pF

Reverse Transfer Capacitance

55

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time

9

15

ns

Turn-ON Rise Time

9

15

ns

Turn-OFF Delay Time

14

20

ns

Turn-OFF Fall Time

6

12

ns

Total Gate Charge

4.3

7

nC

Gate-Source Charge

0.65

nC

Gate-Drain Charge

1.2

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

0.88

1.2

V

Maximum Continuous Drain-Source Diode

Forward Current

0.8

A

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in