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UT5504G-TN3-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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UT5504G-TN3-R Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 5 page UT5504 Power MOSFET UNISONICTECHNOLOGIESCO.,Ltd 4 of 5 www.unisonic.com.tw QW-R502-417.E ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD IF=IS, VGS=0V -1 V Reverse Recovery Time tRR IF=-5A, dIF/dt=100A/µs 15.5 ns Reverse Recovery Charge QRR 7.9 nC Continuous Current IS -8 A Pulsed Current (Note 3) ISM -32 A Notes: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2 %. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. |
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