UT4413

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-198.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

V

Continuous Drain Current (Note 1)

-15

A

Pulsed Drain Current (Note 2)

-80

A

3

W

Junction a Temperature

-55 ~ +150

°C

Strong Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

62

75

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Drain-Source Breakdown Voltage

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.5

-2.2

-3.5

V

On State Drain Current

-60

A

Static Drain-Source On-Resistance

11.2

13

mΩ

12

14

mΩ

13.4

mΩ

DYNAMIC PARAMETERS

Input Capacitance

4245 5500

pF

Output Capacitance

983

Reverse Transfer Capacitance

689

SWITCHING PARAMETERS

Total Gate Charge

69

90

nC

Gate Source Charge

15.2

Gate Drain Charge

18.8

Turn-ON Delay Time

16.5

ns

Turn-ON Rise Time

23.5

Turn-OFF Delay Time

116

Turn-OFF Fall-Time

82

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward

Voltage(Note2)

-0.72

-1

V

Maximum Continuous Drain-Source

Diode Forward Current

5

A

Reverse Recovery Time

59

77

ns

Reverse Recovery Charge

55

nC

2. Pulse width ≤300us, duty cycle ≤0.5% max.

3. Surface mounted on 1 in