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UT3409G-AL3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT3409G-AL3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., LTD QW-R502-244.E P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <130mΩ @VGS = -10V * RDS(ON) < 200mΩ @VGS = -4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT3409G-AE2-R SOT-23-3 S G D Tape Reel UT3409G-AE3-R SOT-23 S G D Tape Reel UT3409G-AL3-R SOT-323 S G D Tape Reel Note: Pin Assignment: S: Source G: Gate D: Drain MARKING |
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